Datasheet > BUZ76A

BUZ76A

更新时间： 2024-11-30 22:08:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	176K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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BUZ76A 数据手册

BUZ 76 A

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

)

DS(on

Package

Ordering Code

BUZ 76 A

400 V

2.7 A

2.5 Ω

TO-220 AB

C67078-S1315-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 23 °C

2.7

Pulsed drain current

Dpuls

T = 25 °C

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

I = 3 A, V = 50 V, R = 25 Ω

L = 35 mH, T = 25 °C

180

Gate source voltage

Power dissipation

tot

T = 25 °C

Operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Thermal resistance, chip case

≤ 3.1

K/W

thJC

thJA

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

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