BUZ72L

更新时间： 2024-11-29 22:39:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	193K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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中文翻译

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数据手册

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BUZ72L 数据手册

BUZ 72 L

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Pin 1

Pin 2

Pin 3

Type

DS(on)

Package

Ordering Code

BUZ 72 L

100 V

10 A

0.2 Ω

TO-220 AB

C67078-S1327-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 25 °C

Pulsed drain current

Dpuls

T = 25 °C

7.9

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

Ω

I = 10 A, V = 25 V, R = 25

L = 885 µH, T = 25 °C

Gate source voltage

Gate-source peak voltage,aperiodic

Power dissipation

tot

T = 25 °C

Operating temperature

-55 ... + 150 °C

-55 ... + 150

Storage temperature

stg

≤

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

3.1

K/W

thJC

thJA

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

中文翻译

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