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BUZ73ALH PDF预览

BUZ73ALH

更新时间: 2024-11-30 09:03:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
10页 425K
描述
SIPMOS Power Transistor

BUZ73ALH 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.23Is Samacsys:N
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):120 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):5.5 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):22 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BUZ73ALH 数据手册

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BUZ 73AL H  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• Logic Level  
. Halogen-free according to IEC61249-2-21  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Pb-free  
VDS  
ID  
RDS(on  
)
BUZ 73 AL H  
200 V  
5.5 A  
0.6  
PG-TO220-3  
Yes  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 37 ˚C  
5.5  
C
Pulsed drain current  
Dpuls  
T = 25 ˚C  
22  
7
C
Avalanche current,limited by T  
jmax  
AR  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
E
6.5  
mJ  
jmax  
AR  
AS  
I = 7 A, V = 50 V, R = 25  
D
DD  
GS  
L = 3.67 mH, T = 25 ˚C  
120  
j
Gate source voltage  
V
P
±
20  
V
GS  
tot  
ESD-Sensitivity HBM as per MIL-STD 883  
Power dissipation  
Class 1  
W
T = 25 ˚C  
40  
C
Operating temperature  
T
T
-55 ... + 150  
-55 ... + 150  
˚C  
K/W  
j
Storage temperature  
stg  
Thermal resistance, chip case  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
3.1  
thJC  
thJA  
R
75  
E
55 / 150 / 56  
Rev. 2.4  
Page 1  
2009-11-10  

BUZ73ALH 替代型号

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