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BUZ76 PDF预览

BUZ76

更新时间: 2024-11-30 23:14:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 178K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ76 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
Factory Lead Time:1 week风险等级:5.09
雪崩能效等级(Eas):180 mJ配置:SINGLE
最小漏源击穿电压:400 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:1.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUZ76 数据手册

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BUZ 76  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 76  
400 V  
3 A  
1.8 Ω  
TO-220 AB  
C67078-S1315-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 37 °C  
C
3
Pulsed drain current  
Dpuls  
AR  
T = 25 °C  
C
12  
3
Avalanche current,limited by T  
jmax  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
5
mJ  
jmax  
AR  
AS  
E
I = 3 A, V = 50 V, R = 25 Ω  
D
DD  
GS  
L = 35 mH, T = 25 °C  
180  
j
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
40  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip case  
R
3.1  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
75  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  

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