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BUZ74 PDF预览

BUZ74

更新时间: 2024-10-02 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管开关脉冲高压局域网
页数 文件大小 规格书
4页 107K
描述
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

BUZ74 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

BUZ74 数据手册

 浏览型号BUZ74的Datasheet PDF文件第2页浏览型号BUZ74的Datasheet PDF文件第3页浏览型号BUZ74的Datasheet PDF文件第4页 
BUZ74  
N CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
FEATURE  
N channel in a plastic TO220 package.  
They are intended for use in switched mode power supplies,  
motor control, welding,  
DC-DC & DC-AC converters, and in general purpose  
switching applications.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
VDS  
IDS  
Drain-Source Voltage  
Continuous Drain Current TC= 37°C  
500  
2.4  
V
A
IDM  
IAR  
Pulsed Drain Current TC= 25°C  
9.5  
2.4  
Avalanche Current, Limited by Tjmax  
Avalanche Energy, Single pulse  
ID = 2.4 A, VDD = 50 V, RGS = 25 , L= 56.3 µH, Tj = 25°C  
Avalanche Energy, Periodic Limited by Tjmax  
Gate-Source Voltage  
Drain-Source on Resistance  
Power Dissipation at Case Temperature TC= 25°C  
Operating Temperature  
EAS  
180  
mJ  
EAR  
VGS  
RDS(on)  
PT  
tJ  
tstg  
5
20  
3
V
W
40  
-55 to +150  
-55 to +150  
°C  
Storage Temperature range  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJC  
RthJA  
Thermal Resistance, junction-case  
Thermal Resistance, junction-ambient  
3.1  
75  
K/W  
01/10/2012  
COMSET SEMICONDUCTORS  
1/4  

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