Datasheet > BUZ73A

BUZ73A

更新时间： 2024-11-30 12:51:11

品牌	Logo	应用领域
COMSET		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
3页	104K
描述
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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BUZ73A 数据手册

SEMICONDUCTORS

BUZ73A

N CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

FEATURE

This is an N-channel enhancement mode silicon gate

power field effect transistor designed for applications such

as switching regulators, switching converters, motor

drivers, relay drivers, and drivers for high power bipolar

switching transistors requiring high speed and low gate

drive power.

This type can be operated directly from integrated circuits

and housed in a TO-220 envelope.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_DS

V_SD

I_DS

I_DM

V_GS

R_DS(on)

P_T

t_J

t_stg

t_L

Drain-Source Voltage

Drain-Source diode Voltage

Continuous Drain Current T_C= 37°C

Pulsed Drain Current T_C= 25°C

Gate-Source Voltage

Drain-Source on Resistance

Power Dissipation at Case Temperature T_C= 25°C

Operating Temperature

Storage Temperature range

Lead Temperature 1.6 mm from case for 10 seconde

200

<1.7

5.5

0.6

-55 to +150

300

Ω

Watts

°C

01/10/2012

COMSET SEMICONDUCTORS

1/3

12 3

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BUZ73A-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73A-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
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BUZ73AL	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ73AL-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73AL-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73AL-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73ALH	INFINEON	获取价格	SIPMOS Power Transistor