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BUZ72LSMD PDF预览

BUZ72LSMD

更新时间: 2024-02-26 17:23:33
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 90K
描述
?Power MOSFET. 100V. D睵AK . RDSon=0.2 Ohm. 10A. LL?

BUZ72LSMD 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.75Base Number Matches:1

BUZ72LSMD 数据手册

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BUZ 72L  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• Logic Level  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Ordering Code  
VDS  
ID  
RDS(on  
)
BUZ 72 L  
100 V  
10 A  
0.2  
TO-220 AB  
C67078-S1327-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 25 ˚C  
10  
C
Pulsed drain current  
Dpuls  
T = 25 ˚C  
40  
10  
7.9  
C
Avalanche current,limited by T  
jmax  
AR  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
E
mJ  
jmax  
AR  
AS  
I = 10 A, V = 25 V, R = 25  
D
DD  
GS  
L = 885 µH, T = 25 ˚C  
59  
j
Gate source voltage  
V
P
±
20  
V
GS  
tot  
ESD-Sensitivity HBM as per MIL-STD 883  
Power dissipation  
Class 1  
W
T = 25 ˚C  
40  
C
Operating temperature  
T
T
-55 ... + 150  
-55 ... + 150  
˚C  
K/W  
j
Storage temperature  
stg  
Thermal resistance, chip case  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
3.1  
thJC  
thJA  
R
75  
E
55 / 150 / 56  
Data Sheet  
1
05.99  

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