Datasheet > BUZ73A

BUZ73A

更新时间： 2024-11-29 22:39:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
5页	46K
描述
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET

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BUZ73A 数据手册

BUZ73A

Semiconductor

Data Sheet

October 1998

File Number 2263.1

5.8A, 200V, 0.600 Ohm, N-Channel Power

MOSFET

Features

• 5.8A, 200V

• r = 0.600Ω

[ /Title

(BUZ73

/Subject

(5.8A,

200V,

0.600

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA4600.

• Majority Carrier Device

Ohm, N-

Channel

Power

MOS-

FET)

Ordering Information

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

BUZ73A

TO-220AB

NOTE: When ordering, use the entire part number.

Symbol

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FET,

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

TO-

DRAIN (FLANGE)

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/UseOut-

lines

/DOC-

VIEW

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5

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BUZ73A 替代型号

型号	品牌	替代类型	描述	数据表
IRF623	INFINEON	功能相似	Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
BUZ73A	INFINEON	功能相似	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
IRF620	STMICROELECTRONICS	功能相似	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

与BUZ73A相关器件

型号	品牌	获取价格	描述	数据表
BUZ73AC67078-S1317A3	INFINEON	获取价格	TRANSISTOR TO 220 MOSFET N KANAL
BUZ73A-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73A-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73A-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73AH	INFINEON	获取价格	SIPMOS Power Transistor
BUZ73AL	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ73AL-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73AL-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73AL-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ73ALH	INFINEON	获取价格	SIPMOS Power Transistor

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