Datasheet > BULD118D

BULD118D

更新时间： 2024-09-27 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压晶体管
页数	文件大小	规格书
7页	257K
描述
高压快速切换NPN功率晶体管

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中文翻译

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数据手册

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BULD118D 数据手册

BULD118D-1

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

APPLICATIONS:

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

IPAK

(TO-251)

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

INTERNAL SCHEMATIC DIAGRAM

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

700

400

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

June 2001

12 3 4 5 6 7

中文翻译

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BULD128DA-1	STMICROELECTRONICS	获取价格	4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251
BULD128DB1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-251AA