5秒后页面跳转
捷配首页

Datasheet > BULD125KC
BULD125KC PDF预览

BULD125KC

更新时间： 2024-09-25 22:17:31
品牌 Logo 应用领域
POINN 晶体二极管晶体管开关局域网
页数 文件大小 规格书
8页 170K
描述
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

阅读下载

中文翻译

获取价格

BULD125KC 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.77
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：400 V
配置：SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE)：10
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

BULD125KC 数据手册

 浏览型号BULD125KC的Datasheet PDF文件第2页浏览型号BULD125KC的Datasheet PDF文件第3页浏览型号BULD125KC的Datasheet PDF文件第4页浏览型号BULD125KC的Datasheet PDF文件第5页浏览型号BULD125KC的Datasheet PDF文件第6页浏览型号BULD125KC的Datasheet PDF文件第7页 
BULD125KC  
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE  
Copyright © 1997, Power Innovations Limited, UK  
MAY 1994 - REVISED SEPTEMBER 1997  
●
●
Designed Specifically for High Frequency  
Electronic Ballasts  
TO-220 PACKAGE  
(TOP VIEW)  
Integrated Fast t Anti-Parallel Diode,  
rr  
1
2
3
B
C
E
Enhancing Reliability  
●
●
●
Diode t Typically 1 µs  
rr  
Tightly Controlled Transistor Storage Times  
Voltage Matched Integrated Transistor and  
Diode  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
device symbol  
●
●
Characteristics Optimised for Cool Running  
C
Diode-Transistor Charge Coupling  
Minimised to Enhance Frequency Stability  
description  
The new BULDxx range of transistors have been  
B
designed specifically for use in High Frequency  
Electronic Ballasts (HFEB’s). This range of  
switching transistors has tightly controlled  
E
storage times and an integrated fast t anti-  
rr  
parallel diode. The revolutionary design ensures  
that the diode has both fast forward and reverse  
recovery times, achieving the same performance  
as a discrete anti-parallel diode plus transistor.  
The integrated diode has minimal charge  
coupling with the transistor, increasing frequency  
stability, especially in lower power circuits where  
the circulating currents are low. By design, this  
new device offers a voltage matched integrated  
transistor and anti-parallel diode.  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
Collector-emitter voltage (VBE = 0)  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
Emitter-base voltage  
VCES  
VCBO  
VCEO  
VEBO  
IC  
600  
V
V
600  
400  
V
9
V
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
8
A
ICM  
12  
A
IB  
4
A
Peak base current (see Note 1)  
IBM  
6
A
Continuous device dissipation at (or below) 25°C case temperature  
Maximum average continuous diode forward current at (or below) 25°C case temperature  
Operating junction temperature range  
Ptot  
IE(av)  
Tj  
85  
W
A
0.5  
-65 to +150  
-65 to +150  
°C  
°C  
Storage temperature range  
Tstg  
NOTE 1: This value applies for tp = 10 ms, duty cycle £ 2%.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
12345678

中文翻译

下载PDF

与BULD125KC相关器件

型号 品牌 获取价格 描述 数据表
BULD128D-1 STMICROELECTRONICS

获取价格

 		4A, 400V, NPN, Si, POWER TRANSISTOR, TO-252
BULD128D-1-A STMICROELECTRONICS

获取价格

 		4A, 400V, NPN, Si, POWER TRANSISTOR, TO-252
BULD128D-1-B STMICROELECTRONICS

获取价格

 		4A, 400V, NPN, Si, POWER TRANSISTOR, TO-252
BULD128DA1 ETC

获取价格

 		TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA
BULD128DA-1 STMICROELECTRONICS

获取价格

 		4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251
BULD128DB1 ETC

获取价格

 		TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA
BULD128DB-1 STMICROELECTRONICS

获取价格

 		4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251
BULD138 ETC

获取价格
BULD138-1 ETC

获取价格

 		TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251
BULD25 POINN

获取价格

 		NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

与BULD125KC相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证