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BULD25SL PDF预览

BULD25SL

更新时间： 2024-09-25 22:17:31
品牌 Logo 应用领域
POINN 晶体二极管晶体管开关
页数 文件大小 规格书
12页 280K
描述
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

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中文翻译

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BULD25SL 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：N最大集电极电流 (IC)：2 A
集电极-发射极最大电压：400 V配置：SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：10JESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

BULD25SL 数据手册

 浏览型号BULD25SL的Datasheet PDF文件第2页浏览型号BULD25SL的Datasheet PDF文件第3页浏览型号BULD25SL的Datasheet PDF文件第4页浏览型号BULD25SL的Datasheet PDF文件第5页浏览型号BULD25SL的Datasheet PDF文件第6页浏览型号BULD25SL的Datasheet PDF文件第7页 
BULD25D, BULD25DR, BULD25SL  
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE  
Copyright © 1997, Power Innovations Limited, UK  
JULY 1994 - REVISED SEPTEMBER 1997  
●
●
Designed Specifically for High Frequency  
Electronic Ballasts  
D PACKAGE  
(TOP VIEW)  
Integrated Fast t Anti-parallel Diode,  
1
2
3
4
rr  
8
7
6
5
C
C
C
C
B
NC  
NC  
E
Enhancing Reliability  
●
●
●
●
Diode t Typically 500 ns  
rr  
New Ultra Low-Height SOIC Power Package  
Tightly Controlled Transistor Storage Times  
NC - No internal connection  
Voltage Matched Integrated Transistor and  
Diode  
SL PACKAGE  
(TOP VIEW)  
●
●
Characteristics Optimised for Cool Running  
1
2
3
B
C
E
Diode-Transistor Charge Coupling  
Minimised to Enhance Frequency Stability  
●
●
Custom Switching Selections Available  
Surface Mount and Through-Hole Options  
PACKAGE  
Small-outline  
Small-outline taped  
and reeled  
PART # SUFFIX  
device symbol  
D
C
DR  
SL  
Single-in-line  
B
description  
The new BULDxx range of transistors have been  
designed specifically for use in High Frequency  
Electronic Ballasts (HFEB’s). This range of  
switching transistors has tightly controlled  
E
storage times and an integrated fast t anti-parallel diode. The revolutionary design ensures that the diode  
rr  
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel  
diode plus transistor.  
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,  
especially in lower power circuits where the circulating currents are low. By design, this new device offers a  
voltage matched integrated transistor and anti-parallel diode.  
This device is available in the now well established 8 pin low height surface mount D package, and the TO-  
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for  
compact ballast applications.  
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
Collector-emitter voltage (VBE = 0)  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
Emitter-base voltage  
VCES  
VCBO  
VCEO  
VEBO  
600  
600  
400  
9
V
V
V
V
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
1234567...12

中文翻译

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