Datasheet > BULK128_08

BULK128_08

更新时间： 2024-09-26 04:20:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
11页	225K
描述
High voltage fast-switching NPN power transistor

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BULK128_08 数据手册

BULK128

High voltage fast-switching

NPN power transistor

Features

■ High voltage capability

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

SOT-82

Description

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA. The device is

designed for use in lighting applications and low

cost switch-mode power supplies.

Figure 1.

Internal schematic diagram

Table 1.

Order code

BULK128

Device summary

Marking

Package

Packaging

BULK128

SOT-82

Tube

June 2008

Rev 2

1/11

www.st.com

12 3 4 5 6 7...11

中文翻译

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BULK381D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 5A I(C) \| SOT-82
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