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BULT118D PDF预览

BULT118D

更新时间: 2024-11-19 22:39:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 89K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BULT118D 数据手册

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BULT118D  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
NPN TRANSISTOR  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
1
2
APPLICATIONS:  
3
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
SOT-32  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
2
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
4
A
IB  
1
A
IBM  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
2
45  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
June 1997  

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