BULT116D

更新时间： 2024-09-25 21:53:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管
页数	文件大小	规格书
6页	211K
描述
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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BULT116D 数据手册

BULT116D

MEDIUM VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

PRELIMINARY DATA

■

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

APPLICATIONS:

■

COMPACT FLUORESCENT LAMPS UP TO

23 W AT 110 V A.C. MAINS

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

AT 110 V A.C. MAINS

■

SOT-32

DESCRIPTION

The device is manufactured using Multi Epitaxial

Planar technology for high switching speeds and

medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

INTERNAL SCHEMATIC DIAGRAM

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

400

200

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

February 2003

12 3 4 5 6

中文翻译

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