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BULT118_08 PDF预览

BULT118_08

更新时间: 2024-11-20 09:02:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
10页 246K
描述
High voltage fast-switching NPN power transistor

BULT118_08 数据手册

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BULT118  
High voltage fast-switching NPN power transistor  
Features  
High voltage capability  
Minimum lot-to-lot spread for reliable operation  
Very high switching speed  
Applications  
Electronic ballast for fluorescent lighting  
1
2
Flyback and forward single transistor low power  
3
converters  
SOT-32  
Description  
The device is manufactured using high voltage  
multi-epitaxial planar technology for high  
Figure 1.  
Internal schematic diagram  
switching speeds and medium voltage capability.  
It uses a cellular emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
Table 1.  
Order code  
BULT118  
Device summary  
Marking  
Package  
SOT-32  
Packaging  
BULT118  
Tube  
July 2008  
Rev 2  
1/10  
www.st.com  
10  

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