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BULK128D-B PDF预览

BULK128D-B

更新时间: 2024-11-20 03:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 217K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BULK128D-B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:SOT-82, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.81最大集电极电流 (IC):4 A
集电极-发射极最大电压:400 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):8JESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:55 W
最大功率耗散 (Abs):55 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:1.5 V

BULK128D-B 数据手册

 浏览型号BULK128D-B的Datasheet PDF文件第2页浏览型号BULK128D-B的Datasheet PDF文件第3页浏览型号BULK128D-B的Datasheet PDF文件第4页浏览型号BULK128D-B的Datasheet PDF文件第5页浏览型号BULK128D-B的Datasheet PDF文件第6页浏览型号BULK128D-B的Datasheet PDF文件第7页 
BULK128D-B  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
3
2
VERY HIGH SWITCHING SPEED  
1
APPLICATIONS:  
SOT-82  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Value  
700  
Unit  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
BVEBO  
(IC = 0, IB = 2 A, tp < 10µs, Tj < 150oC)  
Collector Current  
IC  
ICM  
IB  
4
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
8
2
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
4
55  
A
o
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
August 2001  

BULK128D-B 替代型号

型号 品牌 替代类型 描述 数据表
BUD43B ONSEMI

功能相似

POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS

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