Datasheet > BULD3N7T4

BULD3N7T4

更新时间： 2024-09-26 21:00:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关晶体管
页数	文件大小	规格书
10页	241K
描述
3A, 400V, NPN, Si, POWER TRANSISTOR, TO-252, ROHS COMPLIANT, DPAK-3

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中文翻译

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技术参数
数据手册

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BULD3N7T4 技术参数

生命周期：	Obsolete	零件包装代码：	TO-252
包装说明：	ROHS COMPLIANT, DPAK-3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	最大集电极电流 (IC)：	3 A
集电极-发射极最大电压：	400 V	配置：	SINGLE
最小直流电流增益 (hFE)：	4	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

BULD3N7T4 数据手册

BULD3N7T4

Medium voltage fast-switching NPN Power Transistor

General features

■ Medium voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ In compliance with the 2002/93/EC European

Directive

DPAK

Description

The device is manufactured using high voltage

Multi-Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

Internal schematic diagram

The device is expressly designed for a new

solution to be used in compact fluorescent lamps,

H.F. ballast voltage FED where it is coupled with

the BULD3P5T4, its complementary PNP

transistor.

Applications

■ Electronic ballast for fluorescent lighting

Order codes

Part Number

Marking

Package

DPAK

Packing

BULD3N7T4

BULD3N7

Tape & Reel

June 2006

Rev 1

1/10

www.st.com

12 3 4 5 6 7...10

中文翻译

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