Datasheet > BULD50

BULD50

更新时间： 2024-09-25 22:17:31

品牌	Logo	应用领域
POINN		晶体二极管晶体管
页数	文件大小	规格书
10页	233K
描述
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

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BULD50 数据手册

BULD50KC, BULD50SL

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

FEBRUARY 1994 - REVISED SEPTEMBER 1997

●

Designed Specifically for High Frequency

Electronic Ballasts

TO-220 PACKAGE

(TOP VIEW)

Integrated Fast t Anti-Parallel Diode,

Enhancing Reliability

●

Diode t Typically 1 µs

New Low-Height SL Power Package,

TO220 Pin-Compatible

Pin 2 is in electrical contact with the mounting base.

MDTRACA

●

Tightly Controlled Transistor Storage Times

Voltage Matched Integrated Transistor and

Diode

SL PACKAGE

(TOP VIEW)

●

Characteristics Optimised for Cool Running

Diode-Transistor Charge Coupling

Minimised to Enhance Frequency Stability

description

The new BULDxx range of transistors have been

designed specifically for use in High Frequency

Electronic Ballasts (HFEB’s). This range of

switching transistors has tightly controlled

device symbol

storage times and an integrated fast t anti-

parallel diode. The revolutionary design ensures

that the diode has both fast forward and reverse

recovery times, achieving the same performance

as a discrete anti-parallel diode plus transistor.

The integrated diode has minimal charge

coupling with the transistor, increasing frequency

stability, especially in lower power circuits where

the circulating currents are low. By design, this

new device offers a voltage matched integrated

transistor and anti-parallel diode.

✝

absolute maximum ratings at 25°C (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-emitter voltage (V_BE= 0)

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

Emitter-base voltage

V_CES

V_CBO

V_CEO

V_EBO

600

400

BULD50KC

Continuous collector current

I_C

I_CM

I_B

3.5

BULD50SL (see Note 1)

Peak collector current (see Note 2)

Continuous base current

BULD50KC

1.5

2.5

BULD50SL (see Note 1)

Peak base current (see Note 2)

I_BM

NOTES: 1. This value applies for t_p= 1 s.

2. This value applies for t_p= 10 ms, duty cycle £ 2%.

✝ £ 25°C case temperature for BULD50KC, and £ 25°C ambient temperature for BULD50SL

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...10

中文翻译

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与BULD50相关器件

型号	品牌	获取价格	描述	数据表
BULD50KC	POINN	获取价格	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
BULD50SL	POINN	获取价格	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
BULD741	STMICROELECTRONICS	获取价格	High voltage fast-switching NPN power transistor
BULD741-1	STMICROELECTRONICS	获取价格	High voltage fast-switching NPN power transistor
BULD741T4	STMICROELECTRONICS	获取价格	High voltage fast-switching NPN power transistor
BULD742C	STMICROELECTRONICS	获取价格	High voltage fast-switching
BULD742CT4	STMICROELECTRONICS	获取价格	High voltage fast-switching
BULD85KC	POINN	获取价格	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
BULD85KC	TRSYS	获取价格	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
BULK118	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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