生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最小直流电流增益 (hFE): | 8 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 35 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BULD128DA1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA | |
BULD128DA-1 | STMICROELECTRONICS |
获取价格 |
4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251 | |
BULD128DB1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA | |
BULD128DB-1 | STMICROELECTRONICS |
获取价格 |
4A, 400V, NPN, Si, POWER TRANSISTOR, TO-251 | |
BULD138 | ETC |
获取价格 |
||
BULD138-1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 | |
BULD25 | POINN |
获取价格 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE | |
BULD25D | POINN |
获取价格 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE | |
BULD25DR | POINN |
获取价格 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE | |
BULD25SL | POINN |
获取价格 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |