Datasheet > BULD138

BULD138

更新时间： 2024-09-25 23:37:23

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描述

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中文翻译

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数据手册

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BULD138 数据手册

BULD138

HIGH VOLTAGE FAST SWITCHING

NPN POWER TRANSISTOR

PRELIMINARY DATA

■

SGS-THOMSON PREFERRED SALESTYPE

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

FULLY CHARACTERISED AT 125^oC

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■

APPLICATIONS

IPAK

(TO-251)

(Suffix ”-1”)

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■

FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

The BULD138 is manufactured using high

voltage Multi Epitaxial Planar technology for high

switching speeds and high voltage capability. It

uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

800

400

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p< 5 ms)

Total Dissipation at T_c= 25 ^oC

Storage Temperature

P_tot

T_stg

T_j

^oC

-65 to 150

150

Max. Operating Junction Temperature

1/6

January 1995

12 3 4 5 6

中文翻译

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与BULD138相关器件

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BULD25DR	POINN	获取价格	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
BULD25SL	POINN	获取价格	NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
BULD26	ETC	获取价格
BULD26-1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 4A I(C) \| TO-251
BULD38	ETC	获取价格
BULD38-1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 5A I(C) \| TO-251
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