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BUK9832-55A PDF预览

BUK9832-55A

更新时间: 2024-11-14 11:10:07
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 967K
描述
N-channel TrenchMOS logic level FETProduction

BUK9832-55A 数据手册

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BUK9832-55A  
N-channel TrenchMOS logic level FET  
Rev. 02 — 1 June 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Suitable for logic level gate drive  
on-state resistance  
sources  
„ Q101 compliant  
1.3 Applications  
„ 12 V and 24 V loads  
„ Motors, lamps and solenoids  
„ Automotive and general purpose  
power switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 150 °C  
-
-
-
-
-
-
55  
12  
8
V
ID  
drain current  
VGS = 5 V; Tsp = 25 °C;  
A
see Figure 1; see Figure 3  
Ptot  
total power  
dissipation  
Tsp = 25 °C; see Figure 2  
W
Static characteristics  
RDSon drain-source  
VGS = 4.5 V; ID = 8 A;  
Tj = 25 °C  
-
-
36  
mΩ  
on-state  
resistance  
VGS = 10 V; ID = 8 A; Tj = 25 °C  
-
-
25  
27  
29  
32  
mΩ  
mΩ  
VGS = 5 V; ID = 8 A; Tj = 25 °C;  
see Figure 12; see Figure 13  
Avalanche ruggedness  
EDS(AL)S  
non-repetitive  
drain-source  
ID = 10 A; Vsup 55 V;  
RGS = 50 ; VGS = 5 V;  
-
-
100 mJ  
avalanche energy Tj(init) = 25 °C; unclamped  

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