Datasheet > BUK9832-55A

BUK9832-55A

更新时间： 2024-11-12 11:10:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	967K
描述
N-channel TrenchMOS logic level FETProduction

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BUK9832-55A 数据手册

BUK9832-55A

N-channel TrenchMOS logic level FET

Rev. 02 — 1 June 2010

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

1.3 Applications

12 V and 24 V loads

Motors, lamps and solenoids

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 150 °C

I_D

drain current

V_GS= 5 V; T_sp= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_sp= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 4.5 V; I_D= 8 A;

T_j= 25 °C

mΩ

on-state

resistance

V_GS= 10 V; I_D= 8 A; T_j= 25 °C

mΩ

V_GS= 5 V; I_D= 8 A; T_j= 25 °C;

see Figure 12; see Figure 13

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 10 A; V_sup≤ 55 V;

R_GS= 50 Ω; V_GS= 5 V;

100 mJ

avalanche energy T_j(init)= 25 °C; unclamped

12 3 4 5 6 7...13

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