5秒后页面跳转
BUK9832-55A PDF预览

BUK9832-55A

更新时间: 2024-11-12 11:10:07
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 967K
描述
N-channel TrenchMOS logic level FETProduction

BUK9832-55A 数据手册

 浏览型号BUK9832-55A的Datasheet PDF文件第2页浏览型号BUK9832-55A的Datasheet PDF文件第3页浏览型号BUK9832-55A的Datasheet PDF文件第4页浏览型号BUK9832-55A的Datasheet PDF文件第5页浏览型号BUK9832-55A的Datasheet PDF文件第6页浏览型号BUK9832-55A的Datasheet PDF文件第7页 
BUK9832-55A  
N-channel TrenchMOS logic level FET  
Rev. 02 — 1 June 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
„ Low conduction losses due to low  
„ Suitable for logic level gate drive  
on-state resistance  
sources  
„ Q101 compliant  
1.3 Applications  
„ 12 V and 24 V loads  
„ Motors, lamps and solenoids  
„ Automotive and general purpose  
power switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 150 °C  
-
-
-
-
-
-
55  
12  
8
V
ID  
drain current  
VGS = 5 V; Tsp = 25 °C;  
A
see Figure 1; see Figure 3  
Ptot  
total power  
dissipation  
Tsp = 25 °C; see Figure 2  
W
Static characteristics  
RDSon drain-source  
VGS = 4.5 V; ID = 8 A;  
Tj = 25 °C  
-
-
36  
mΩ  
on-state  
resistance  
VGS = 10 V; ID = 8 A; Tj = 25 °C  
-
-
25  
27  
29  
32  
mΩ  
mΩ  
VGS = 5 V; ID = 8 A; Tj = 25 °C;  
see Figure 12; see Figure 13  
Avalanche ruggedness  
EDS(AL)S  
non-repetitive  
drain-source  
ID = 10 A; Vsup 55 V;  
RGS = 50 ; VGS = 5 V;  
-
-
100 mJ  
avalanche energy Tj(init) = 25 °C; unclamped  

与BUK9832-55A相关器件

型号 品牌 获取价格 描述 数据表
BUK9832-55A,115 NXP

获取价格

N-channel TrenchMOS logic level FET SC-73 4-Pin
BUK9832-55AT/R NXP

获取价格

TRANSISTOR 12 A, 50 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN, FET
BUK9832-55ATRL NXP

获取价格

12A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 3 PIN
BUK9832-55ATRL13 NXP

获取价格

12A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 3 PIN
BUK9840-55 NXP

获取价格

TrenchMOS transistor Logic level FET
BUK9840-55,115 NXP

获取价格

N-channel TrenchMOS logic level FET SC-73 4-Pin
BUK9840-55/CU NXP

获取价格

POWER, FET
BUK9840-55T/R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 10.7A I(D) | SOT-223
BUK9875-100A NXP

获取价格

TrenchMOS logic level FET
BUK9875-100A NEXPERIA

获取价格

N-channel TrenchMOS logic level FETProduction