Datasheet > BUK9880-55/CU

BUK9880-55/CU

更新时间： 2024-09-25 19:32:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	224K
描述
POWER, FET

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中文翻译

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技术参数
数据手册

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BUK9880-55/CU 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.19	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

BUK9880-55/CU 数据手册

BUK9880-55

N-channel TrenchMOS logic level FET

19 March 2014

Product data sheet

1. General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

2. Features and benefits

AEC Q101 compliant

Electrostatically robust due to integrated protection diodes

Low conduction losses due to low on-state resistance

•

3. Applications

Automotive and general purpose power switching

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 150 °C

T_sp= 25 °C

7.5

8.3

P_tot

total power dissipation T_sp= 25 °C; Fig. 4

Static characteristics

R_DSondrain-source on-state

resistance

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

V_GS= 5 V; I_D= 5 A; T_j= 25 °C

mΩ

I_D= 2.5 A; V_sup≤ 25 V; R_GS= 50 Ω;

V_GS= 5 V; T_j(init)= 25 °C; unclamped

source avalanche

energy

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