生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
雪崩能效等级(Eas): | 60 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 5.9 A | 最大漏源导通电阻: | 0.03 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 23.6 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9830-30,115 | NXP |
获取价格 |
5.9A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK9830-30,135 | NXP |
获取价格 |
5.9A, 30V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK9830-30115 | NXP |
获取价格 |
TRANSISTOR 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK9830-30135 | NXP |
获取价格 |
TRANSISTOR 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK9832-55A | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction | |
BUK9832-55A | NXP |
获取价格 |
TrenchMOS logic level FET | |
BUK9832-55A,115 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET SC-73 4-Pin | |
BUK9832-55AT/R | NXP |
获取价格 |
TRANSISTOR 12 A, 50 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN, FET | |
BUK9832-55ATRL | NXP |
获取价格 |
12A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 3 PIN | |
BUK9832-55ATRL13 | NXP |
获取价格 |
12A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 3 PIN |