是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | PLASTIC, D2PAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.24 |
雪崩能效等级(Eas): | 1200 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 75 A | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.0035 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 最大脉冲漏极电流 (IDM): | 888 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK963R3-60E | NXP |
获取价格 |
120A, 60V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 | |
BUK963R3-60E | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction | |
BUK963R3-60E,118 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET D2PAK 3-Pin | |
BUK9640 | NXP |
获取价格 |
TrenchMOS transistor Logic level FET | |
BUK9640-100A | NXP |
获取价格 |
TrenchMOS transistor Logic level FET | |
BUK9640-100A | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction | |
BUK9640-100A,118 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET D2PAK 3-Pin | |
BUK964R2-55B | NXP |
获取价格 |
TrenchMOS logic level FET | |
BUK964R2-55B | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction | |
BUK964R2-55B,118 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET D2PAK 3-Pin |