Datasheet > BUK966R5-60E

BUK966R5-60E

更新时间： 2024-11-22 11:13:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	716K
描述
N-channel TrenchMOS logic level FETProduction

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BUK966R5-60E 数据手册

BUK966R5-60E

N-channel TrenchMOS logic level FET

29 July 2016

Product data sheet

1. General description

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

2. Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C

•

3. Applications

12 V Automotive systems

•

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

182

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 25 A; T_j= 25 °C; Fig. 11

5.34

16.6

6.5

mΩ

V_GS= 5 V; I_D= 25 A; V_DS= 48 V;

Fig. 13; Fig. 14

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

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