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BUK9640-100A PDF预览

BUK9640-100A

更新时间: 2024-11-22 11:14:35
品牌 Logo 应用领域
安世 - NEXPERIA 开关脉冲晶体管
页数 文件大小 规格书
13页 723K
描述
N-channel TrenchMOS logic level FETProduction

BUK9640-100A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.72雪崩能效等级(Eas):182 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):39 A
最大漏源导通电阻:0.043 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):159 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUK9640-100A 数据手册

 浏览型号BUK9640-100A的Datasheet PDF文件第2页浏览型号BUK9640-100A的Datasheet PDF文件第3页浏览型号BUK9640-100A的Datasheet PDF文件第4页浏览型号BUK9640-100A的Datasheet PDF文件第5页浏览型号BUK9640-100A的Datasheet PDF文件第6页浏览型号BUK9640-100A的Datasheet PDF文件第7页 
BUK9640-100A  
N-channel TrenchMOS logic level FET  
13 March 2014  
Product data sheet  
1. General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
2. Features and benefits  
Low conduction losses due to low on-state resistance  
Q101 compliant  
Suitable for logic level gate drive sources  
Suitable for thermally demanding environments due to 175 °C rating  
3. Applications  
12 V, 24 V and 42 V loads  
Automotive and general purpose power switching  
Motors, lamps and solenoids  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
39  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 5 V; Tmb = 25 °C; Fig. 2; Fig. 3  
-
-
-
-
-
-
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
158  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 25 A; Tj = 25 °C  
VGS = 10 V; ID = 25 A; Tj = 25 °C  
-
-
-
-
43  
39  
40  
mΩ  
mΩ  
mΩ  
29  
34  
VGS = 5 V; ID = 25 A; Tj = 25 °C;  
Fig. 11; Fig. 12  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 5 V; ID = 25 A; VDS = 80 V;  
Tj = 25 °C; Fig. 13  
-
20  
-
nC  
 
 
 
 

BUK9640-100A 替代型号

型号 品牌 替代类型 描述 数据表
BUK9640-100A,118 NXP

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