Datasheet > BUK965R8-100E

BUK965R8-100E

更新时间： 2024-11-22 11:12:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	728K
描述
N-channel TrenchMOS logic level FETProduction

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BUK965R8-100E 数据手册

BUK965R8-100E

N-channel TrenchMOS logic level FET

28 July 2016

Product data sheet

1. General description

Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

2. Features and benefits

AEC Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C

•

3. Applications

12V, 24V and 48V Automotive systems

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

•

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

120

349

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 5 V; T_mb= 25 °C; Fig. 2

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 25 A; T_j= 25 °C; Fig. 11

4.62

5.8

mΩ

V_GS= 5 V; I_D= 25 A; V_DS= 80 V;

Fig. 13; Fig. 14

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

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