Datasheet > BUK6C2R1-55C,118

BUK6C2R1-55C,118

更新时间： 2024-11-21 21:12:51

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	160K
描述
BUK6C2R1-55C - N-channel TrenchMOS intermediate level FET D2PAK 7-Pin

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技术参数
数据手册

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BUK6C2R1-55C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	7	Reach Compliance Code：	not_compliant
风险等级：	5.74	Base Number Matches：	1

BUK6C2R1-55C,118 数据手册

BUK6C2R1-55C

D2P

N-channel TrenchMOS intermediate level FET

Rev. 3 — 18 January 2012

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using TrenchMOS technology. This product has been designed and

qualified to the appropriate AEC standard for use in high-performance automotive

applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for standard and logic level

gate drive sources

 High current handling capability, up to

320 A

 Suitable for thermally demanding

environments due to 175 °C rating

 Low conduction losses due to very low

on-state resistance

1.3 Applications

 12 V automotive systems

 Start-Stop micro-hybrid applications

 Transmission control

 Electric and electro-hydraulic power

steering

 Ultra high performance power

 Motors, lamps and solenoids

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

228

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

300

2.3

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 90 A;

T_j= 25 °C;

1.9

mΩ

see Figure 11

12 3 4 5 6 7...13

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