BUK6213-30A

更新时间： 2024-11-28 21:54:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	266K
描述
TrenchMOS Intermediate level FET

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数据手册

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BUK6213-30A 数据手册

BUK6213-30A

TrenchMOS™ Intermediate level FET

Rev. 02 — 22 September 2003

Product data

M3D300

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

1.2 Features

■ Low on-state resistance

■ 175 °C rated

■ Q101 compliant

■ Intermediate level compatible.

1.3 Applications

■ Automotive systems

■ 12 V loads

■ Motors, lamps and solenoids

■ General purpose power switching.

1.4 Quick reference data

■ E_DS(AL)S≤ 267 mJ

■ I_D≤ 55 A

■ R_DSon= 10 mΩ (typ)

■ P_tot≤ 102 W.

2. Pinning information

Table 1:

Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Pin Description

Simpliﬁed outline

Symbol

gate (g)

[1]

drain (d)

source (s)

mb mounting base;

connected to

MBB076

drain (d)

Top view

MBK091

SOT428 (D-PAK)

[1] It is not possible to make connection to pin 2 of the package.

12 3 4 5 6 7...13

中文翻译

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