BUK6213-30C

更新时间： 2024-11-29 12:48:23

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	179K
描述
N-channel TrenchMOS intermediate level FET

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BUK6213-30C 数据手册

BUK6213-30C

N-channel TrenchMOS intermediate level FET

Rev. 01 — 4 October 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard and logic level

gate drives

1.3 Applications

12 V automotive systems

Start-Stop micro-hybrid applications

Transmission control

Electric and electro-hydraulic power

steering

Ultra high performance power

Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source on-state

resistance

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; I_D= 10 A;

T_j= 25 °C; see Figure 11

11.9 14

mΩ

I_D= 47 A; V_sup≤ 30 V;

drain-sourceavalanche R_GS= 50 Ω; V_GS= 10 V;

energy

Dynamic characteristics

Q_GDgate-drain charge

T_j(init)= 25 °C; unclamped

I_D= 25 A; V_DS= 24 V;

V_GS= 10 V; see Figure 13;

see Figure 14

4.77

12 3 4 5 6 7...14

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