Datasheet > BUK624R5-30C,118

BUK624R5-30C,118

更新时间： 2024-11-29 18:51:11

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
14页	174K
描述
N-channel TrenchMOS intermediate level FET DPAK 3-Pin

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技术参数
数据手册
替代型号

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BUK624R5-30C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DPAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.75	Base Number Matches：	1

BUK624R5-30C,118 数据手册

BUK624R5-30C

N-channel TrenchMOS intermediate level FET

Rev. 2 — 17 September 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

 Suitable for standard and logic level

gate drive sources

1.3 Applications

 12 V Automotive systems

 Start-Stop micro-hybrid applications

 Transmission control

 Electric and electro-hydraulic power

steering

 Ultra high performance power

 Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

158

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

3.8

4.5

mΩ

on-state

T_j= 25 °C; see Figure 11

resistance

12 3 4 5 6 7...14

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BUK624R5-30C,118 替代型号

型号	品牌	替代类型	描述	数据表
CSD17310Q5A	TI	功能相似	30V, N-Channel NexFET™ Power MOSFETs

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