Datasheet > BUK626R2-40C,118

BUK626R2-40C,118

更新时间： 2024-11-06 22:58:27

品牌	Logo	应用领域
其他 - ETC		开关脉冲晶体管
页数	文件大小	规格书
14页	755K
描述
MOSFET N-CH 40V 90A DPAK

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BUK626R2-40C,118 数据手册

BUK626R2-40C

N-channel TrenchMOS intermediate level FET

Rev. 1 — 12 July 2011

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

 Suitable for standard and logic level

gate drive sources

1.3 Applications

 12 V Automotive systems

 Start-Stop micro-hybrid applications

 Transmission control

 Electric and electro-hydraulic power

steering

 Ultra high performance power

 Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

128

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 15 A;

5.2

6.2

mΩ

on-state resistance T_j= 25 °C; see Figure 11

12 3 4 5 6 7...14

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