Datasheet > BUK6213-30A,118

BUK6213-30A,118

更新时间： 2024-11-29 21:11:03

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
10页	113K
描述
BUK6213-30A - N-channel TrenchMOS intermediate level FET DPAK 3-Pin

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数据手册

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BUK6213-30A,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DPAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.69	Base Number Matches：	1

BUK6213-30A,118 数据手册

BUK6213-30A

N-channel TrenchMOS intermediate level FET

Rev. 03 — 2 February 2011

Product data sheet

1. Product profile

1.1 General description

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

 Suitable for logic or standard level

gate drive sources

1.3 Applications

 12 V loads

 General purpose power switching

 Motors, lamps and solenoids

 Automotive systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

102

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 10 A;

T_j= 25 °C; see Figure 4;

see Figure 5

mΩ

on-state

resistance

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 55 A; V_sup≤ 30 V;

R_GS= 50 Ω; V_GS= 10 V;

267 mJ

avalanche energy T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge V_GS= 5 V; I_D= 25 A;

V_DS= 24 V

[1] Continuous current is limited by bondwires.

12 3 4 5 6 7...10

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