Datasheet > BUH100/D

BUH100/D

更新时间： 2024-01-08 03:38:05

品牌	Logo	应用领域
其他 - ETC		晶体开关晶体管
页数	文件大小	规格书
12页	228K
描述
SWITCHMODE? NPN Silicon Planar Power Transistor

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技术参数
数据手册

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BUH100/D 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	7.42	其他特性：	LEADFORM OPTIONS ARE AVAILABLE
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	400 V	配置：	SINGLE
最小直流电流增益 (hFE)：	6	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	100 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	23 MHz

BUH100/D 数据手册

ON Semiconductort

BUH100

SWITCHMODEt NPN Silicon

Planar Power Transistor

POWER TRANSISTOR

10 AMPERES

700 VOLTS

The BUH100 has an application specific state–of–art die designed

for use in 100 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large

inrush current during either the start–up conditions or under a short

circuit across the load.

100 WATTS

This High voltage/High speed product exhibits the following main

features:

• Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain h

Fast Switching

• Robustness Thanks to the Technology Developed to Manufacture

this Device

• ON Semiconductor Six Sigma Philosophy Provides Tight and

Reproducible Parametric Distributions

CASE 221A–09

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25_C

100

0.8

Watt

W/_C

*Derate above 25°C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

_C/W

1.25

62.5

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

BUH100/D

12 3 4 5 6 7...12

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