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BUH100/D PDF预览

BUH100/D

更新时间: 2024-10-27 23:37:19
品牌 Logo 应用领域
其他 - ETC 晶体开关晶体管
页数 文件大小 规格书
12页 228K
描述
SWITCHMODE? NPN Silicon Planar Power Transistor

BUH100/D 数据手册

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ON Semiconductort  
BUH100  
SWITCHMODEt NPN Silicon  
Planar Power Transistor  
POWER TRANSISTOR  
10 AMPERES  
700 VOLTS  
The BUH100 has an application specific state–of–art die designed  
for use in 100 Watts Halogen electronic transformers.  
This power transistor is specifically designed to sustain the large  
inrush current during either the start–up conditions or under a short  
circuit across the load.  
100 WATTS  
This High voltage/High speed product exhibits the following main  
features:  
Improved Efficiency Due to the Low Base Drive Requirements:  
High and Flat DC Current Gain h  
FE  
Fast Switching  
Robustness Thanks to the Technology Developed to Manufacture  
this Device  
ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
CASE 221A–09  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
10  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
C
10  
20  
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
4
10  
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25_C  
P
100  
0.8  
Watt  
W/_C  
_C  
C
D
*Derate above 25°C  
Operating and Storage Temperature  
T , T  
J
–65 to 150  
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
_C/W  
R
R
1.25  
62.5  
θ
JC  
JA  
θ
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
_C  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BUH100/D  

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