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BUH100G PDF预览

BUH100G

更新时间： 2024-02-25 16:59:48
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管
页数 文件大小 规格书
10页 242K
描述
SWITCHMODE NPN Silicon Planar Power Transistor

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中文翻译

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BUH100G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：7.42其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：6JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：100 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：23 MHz

BUH100G 数据手册

 浏览型号BUH100G的Datasheet PDF文件第2页浏览型号BUH100G的Datasheet PDF文件第3页浏览型号BUH100G的Datasheet PDF文件第4页浏览型号BUH100G的Datasheet PDF文件第5页浏览型号BUH100G的Datasheet PDF文件第6页浏览型号BUH100G的Datasheet PDF文件第7页 
BUH100G  
SWITCHMODEt NPN Silicon  
Planar Power Transistor  
The BUH100G has an application specific state−of−art die designed  
for use in 100 Watts Halogen electronic transformers.  
This power transistor is specifically designed to sustain the large  
inrush current during either the startup conditions or under a short  
circuit across the load.  
http://onsemi.com  
POWER TRANSISTORS  
10 AMPERES  
700 VOLTS − 100 WATTS  
Features  
• Improved Efficiency Due to the Low Base Drive Requirements:  
High and Flat DC Current Gain h  
Fast Switching  
FE  
• Robustness Thanks to the Technology Developed to Manufacture  
this Device  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO−220AB  
CASE 221A−09  
STYLE 1  
Collector−Emitter Sustaining Voltage  
V
V
400  
Vdc  
CEO  
Collector−Base Breakdown Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
700  
700  
10  
Vdc  
Vdc  
Vdc  
Adc  
CBO  
V
CES  
EBO  
1
2
3
V
Collector Current − Continuous  
− Peak (Note 1)  
I
10  
20  
C
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4
10  
Adc  
B
MARKING DIAGRAM  
BM  
Total Device Dissipation @ T = 25_C  
P
D
100  
0.8  
W
W/_C  
C
Derate above 25°C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
−60 to 150  
_C  
J
stg  
BUH100G  
AY WW  
Characteristics  
Symbol  
Max  
1.25  
62.5  
260  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
A
Y
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes1/8″ from Case for 5 Seconds  
T
L
WW = Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
BUH100G  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 5  
BUH100/D  
 
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中文翻译

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BUH100G 替代型号

型号 品牌 替代类型 描述 数据表
BUH100 ONSEMI

类似代替

 POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS
BUH100 MOTOROLA

功能相似

 POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS

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