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BUH1215 PDF预览

BUH1215

更新时间: 2024-01-28 03:07:32
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 76K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH1215 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.9
最大集电极电流 (IC):16 A集电极-发射极最大电压:700 V
配置:SINGLE最小直流电流增益 (hFE):7
JEDEC-95代码:TO-218JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:200 W最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
VCEsat-Max:1.5 VBase Number Matches:1

BUH1215 数据手册

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BUH1215  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
HIGH VOLTAGE CAPABILITY  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
HORIZONTAL DEFLECTION FOR COLOUR  
TV AND MONITORS  
3
2
1
DESCRIPTION  
The BUH1215  
is  
manufactured  
using  
TO-218  
Multiepitaxial Mesa technology for cost-effective  
high performance and uses a Hollow Emitter  
structure to enhance switching speeds.  
The BUH series is designed for use in horizontal  
deflection circuits in televisionsand monitors.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
1500  
700  
Unit  
V
V
10  
V
16  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
22  
A
IB  
9
A
IBM  
Base Peak Current (tp < 5 ms)  
12  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
200  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
January 1999  

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