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BUH100DW PDF预览

BUH100DW

更新时间: 2024-10-28 13:05:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
10页 477K
描述
10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

BUH100DW 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):6JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):23 MHz
Base Number Matches:1

BUH100DW 数据手册

 浏览型号BUH100DW的Datasheet PDF文件第2页浏览型号BUH100DW的Datasheet PDF文件第3页浏览型号BUH100DW的Datasheet PDF文件第4页浏览型号BUH100DW的Datasheet PDF文件第5页浏览型号BUH100DW的Datasheet PDF文件第6页浏览型号BUH100DW的Datasheet PDF文件第7页 
Order this document  
by BUH100/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTOR  
10 AMPERES  
700 VOLTS  
100 WATTS  
The BUH100 has an application specific state–of–art die designed for use in  
100 Watts Halogen electronic transformers.  
This power transistor is specifically designed to sustain the large inrush current  
during either the start–up conditions or under a short circuit across the load.  
This High voltage/High speed product exhibits the following main features:  
Improved Efficiency Due to the Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
Robustness Thanks to the Technology Developed to Manufacture  
this Device  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible  
Parametric Distributions  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
10  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
CBO  
V
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak (1)  
I
C
10  
20  
I
CM  
Base Current — Continuous  
Base Current — Peak (1)  
I
4
10  
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25 C  
C
*Derate above 25°C  
P
D
100  
0.8  
Watt  
W/ C  
Operating and Storage Temperature  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
C/W  
R
θJC  
R
θJA  
1.25  
62.5  
Maximum Lead Temperature for Soldering Purposes:  
1/8from case for 5 seconds  
T
L
260  
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Motorola, Inc. 1995

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