BUH100DW

更新时间： 2024-11-07 13:05:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
10页	477K
描述
10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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技术参数
数据手册

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BUH100DW 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.81
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	400 V	配置：	SINGLE
最小直流电流增益 (hFE)：	6	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	23 MHz
Base Number Matches：	1

BUH100DW 数据手册

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by BUH100/D

SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTOR

10 AMPERES

700 VOLTS

100 WATTS

The BUH100 has an application specific state–of–art die designed for use in

100 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current

during either the start–up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•

Improved Efficiency Due to the Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

•

Robustness Thanks to the Technology Developed to Manufacture

this Device

Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible

Parametric Distributions

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25 C

*Derate above 25°C

100

0.8

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

C/W

θJC

θJA

1.25

62.5

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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与BUH100DW相关器件

型号	品牌	获取价格	描述	数据表
BUH100G	ONSEMI	获取价格	SWITCHMODE NPN Silicon Planar Power Transistor
BUH1015	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH1015	ISC	获取价格	Silicon NPN Power Transistors
BUH1015	SAVANTIC	获取价格	Silicon NPN Power Transistors
BUH1015HI	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH1015HI	SAVANTIC	获取价格	Silicon NPN Power Transistors
BUH1015HI	ISC	获取价格	Silicon NPN Power Transistors
BUH1015T	STMICROELECTRONICS	获取价格	14A, 700V, NPN, Si, POWER TRANSISTOR, TO-218
BUH1215	STMICROELECTRONICS	获取价格	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH1215T	STMICROELECTRONICS	获取价格	16A, 700V, NPN, Si, POWER TRANSISTOR, TO-218

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