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BUH100BG

更新时间： 2024-02-11 22:58:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
10页 281K
描述
10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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BUH100BG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：6JESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：23 MHz
Base Number Matches：1

BUH100BG 数据手册

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BUH100G  
SWITCHMODE NPN Silicon  
Planar Power Transistor  
The BUH100G has an application specific state−of−art die designed  
for use in 100 W Halogen electronic transformers.  
This power transistor is specifically designed to sustain the large  
inrush current during either the startup conditions or under a short  
circuit across the load.  
http://onsemi.com  
POWER TRANSISTORS  
10 AMPERES  
700 VOLTS − 100 WATTS  
Features  
• Improved Efficiency Due to the Low Base Drive Requirements:  
High and Flat DC Current Gain h  
Fast Switching  
FE  
• Robustness Due to the Technology Developed to Manufacture  
this Device  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
10  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
TO−220AB  
CASE 221A−09  
STYLE 1  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
V
CES  
1
2
3
EBO  
Collector Current − Continuous  
− Peak (Note 1)  
I
10  
20  
C
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4
10  
Adc  
B
MARKING DIAGRAM  
I
BM  
Total Device Dissipation @ T = 25_C  
P
D
100  
0.8  
W
W/_C  
C
Derate above 25°C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
−60 to 150  
_C  
J
stg  
BUH100G  
AY WW  
Characteristics  
Symbol  
Max  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, Junction−to−Case  
R
1.25  
q
JC  
Thermal Resistance, Junction−to−Ambient  
R
62.5  
260  
q
JA  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Maximum Lead Temperature for Soldering  
Purposes1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
BUH100G  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 6  
BUH100/D  
 
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