BU2720AX

更新时间： 2024-01-18 03:58:15

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率双极晶体管
页数	文件大小	规格书
7页	79K
描述
Silicon Diffused Power Transistor

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技术参数
数据手册

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BU2720AX 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BU2720AX 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720AX

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal

deflection circuits of colour television receivers. Designed to withstand V_CESpulses up to 1700V.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

T_hs≤ 25 ˚C

V_CEsat

I_Csat

t_s

I_C= 5.5 A; I_B= 1.38 A

f = 16 kHz

1.0

5.5

7.4

I_Csat= 5.5 A; f = 16 kHz

8.5

µs

PINNING - SOT399

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

Base current peak value

Reverse base current

average over any 20 ms period

150

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

˚C

-65

150

Junction temperature

ESD LIMITING VALUES

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_C

Electrostatic discharge capacitor voltage Human body model (250 pF,

1.5 kΩ)

1 Turn-off current.

September 1997

Rev 1.200

12 3 4 5 6 7

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