Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2720DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
825
10
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
25
A
Ptot
Ths ≤ 25 ˚C
-
45
W
V
VCEsat
ICsat
ts
IC = 5.5 A; IB = 1.38 A
f = 16 kHz
-
1.0
-
5.5
7.4
A
ICsat = 5.5 A; f = 16 kHz
8.5
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
c
base
2
collector
emitter
b
3
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
825
10
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
25
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
10
14
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
150
6
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Ths ≤ 25 ˚C
45
W
˚C
˚C
-65
-
150
150
Junction temperature
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 kΩ)
1 Turn-off current.
September 1997
1
Rev 1.300