5秒后页面跳转
BU2720DF PDF预览

BU2720DF

更新时间: 2024-11-30 22:39:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 81K
描述
Silicon Diffused Power Transistor

BU2720DF 数据手册

 浏览型号BU2720DF的Datasheet PDF文件第2页浏览型号BU2720DF的Datasheet PDF文件第3页浏览型号BU2720DF的Datasheet PDF文件第4页浏览型号BU2720DF的Datasheet PDF文件第5页浏览型号BU2720DF的Datasheet PDF文件第6页浏览型号BU2720DF的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU2720DF  
GENERAL DESCRIPTION  
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal  
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1700  
825  
10  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Storage time  
25  
A
Ptot  
Ths 25 ˚C  
-
45  
W
V
VCEsat  
ICsat  
ts  
IC = 5.5 A; IB = 1.38 A  
f = 16 kHz  
-
1.0  
-
5.5  
7.4  
A
ICsat = 5.5 A; f = 16 kHz  
8.5  
µs  
PINNING - SOT399  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
case  
c
base  
2
collector  
emitter  
b
3
case isolated  
1
2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1700  
825  
10  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Base current (DC)  
-
25  
A
IB  
IBM  
-IB(AV)  
-IBM  
Ptot  
Tstg  
Tj  
-
10  
14  
A
Base current peak value  
Reverse base current  
-
A
average over any 20 ms period  
-
150  
6
mA  
A
Reverse base current peak value 1  
Total power dissipation  
Storage temperature  
-
-
Ths 25 ˚C  
45  
W
˚C  
˚C  
-65  
-
150  
150  
Junction temperature  
ESD LIMITING VALUES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VC  
Electrostatic discharge capacitor voltage Human body model (250 pF,  
-
10  
kV  
1.5 k)  
1 Turn-off current.  
September 1997  
1
Rev 1.300  

与BU2720DF相关器件

型号 品牌 获取价格 描述 数据表
BU2720DX ISC

获取价格

isc Silicon NPN Power Transistor
BU2720DX NXP

获取价格

Silicon Diffused Power Transistor
BU2722 NXP

获取价格

Silicon Diffused Power Transistor
BU2722AF NXP

获取价格

Silicon Diffused Power Transistor
BU2722AF SAVANTIC

获取价格

Silicon NPN Power Transistors
BU2722AF ISC

获取价格

Silicon NPN Power Transistors
BU2722AF JMNIC

获取价格

Silicon Power Transistors
BU2722AX ISC

获取价格

isc Silicon NPN Power Transistor
BU2722AX NXP

获取价格

Silicon Diffused Power Transistor
BU2722DF NXP

获取价格

Silicon Diffused Power Transistor