5秒后页面跳转
BU2722AF PDF预览

BU2722AF

更新时间: 2024-11-30 22:39:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
7页 75K
描述
Silicon Diffused Power Transistor

BU2722AF 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):10 A
集电极-发射极最大电压:825 V配置:SINGLE
最小直流电流增益 (hFE):4.5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:45 W
最大功率耗散 (Abs):45 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):3750 nsVCEsat-Max:1 V
Base Number Matches:1

BU2722AF 数据手册

 浏览型号BU2722AF的Datasheet PDF文件第2页浏览型号BU2722AF的Datasheet PDF文件第3页浏览型号BU2722AF的Datasheet PDF文件第4页浏览型号BU2722AF的Datasheet PDF文件第5页浏览型号BU2722AF的Datasheet PDF文件第6页浏览型号BU2722AF的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU2722AF  
GENERAL DESCRIPTION  
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in  
horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1700  
825  
10  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Storage time  
25  
A
Ptot  
Ths 25 ˚C  
-
45  
W
V
VCEsat  
ICsat  
ts  
IC = 4.5 A; IB = 1.0 A  
f = 64 kHz  
-
1.0  
-
4.5  
2.9  
A
ICsat = 4.5 A; f = 64 kHz  
3.5  
µs  
PINNING - SOT199  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
case  
base  
2
collector  
emitter  
b
3
case isolated  
1
2
3
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1700  
825  
10  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Base current (DC)  
-
25  
A
IB  
IBM  
-IB(AV)  
-IBM  
Ptot  
Tstg  
Tj  
-
10  
14  
A
Base current peak value  
Reverse base current  
-
A
average over any 20 ms period  
-
150  
6
mA  
A
Reverse base current peak value 1  
Total power dissipation  
Storage temperature  
-
-
Ths 25 ˚C  
45  
W
˚C  
˚C  
-65  
-
150  
150  
Junction temperature  
ESD LIMITING VALUES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VC  
Electrostatic discharge capacitor voltage Human body model (250 pF,  
-
10  
kV  
1.5 k)  
1 Turn-off current.  
September 1997  
1
Rev 1.200  

BU2722AF 替代型号

型号 品牌 替代类型 描述 数据表
BU2720AF NXP

功能相似

Silicon Diffused Power Transistor

与BU2722AF相关器件

型号 品牌 获取价格 描述 数据表
BU2722AX ISC

获取价格

isc Silicon NPN Power Transistor
BU2722AX NXP

获取价格

Silicon Diffused Power Transistor
BU2722DF NXP

获取价格

Silicon Diffused Power Transistor
BU2722DX ETC

获取价格

TRANSISTOR | BJT | NPN | 825V V(BR)CEO | 10A I(C) | SOT-399
BU2725 NXP

获取价格

Silicon Diffused Power Transistor
BU2725AF NXP

获取价格

Silicon Diffused Power Transistor
BU2725AF ISC

获取价格

isc Silicon NPN Power Transistor
BU2725AW ISC

获取价格

isc Silicon NPN Power Transistor
BU2725AX ISC

获取价格

isc Silicon NPN Power Transistor
BU2725AX SAVANTIC

获取价格

Silicon NPN Power Transistors