Datasheet > BU2730

BU2730

更新时间： 2024-11-30 22:39:43

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
4页	23K
描述
Silicon Diffused Power Transistor

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BU2730 数据手册

Philips Semiconductors

Preliminary specification

Silicon Diffused Power Transistor

BU2730AL

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

horizontal deflection circuits of large screen colour television receivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

T_mb≤ 25 ˚C

125

5.0

V_CEsat

I_Csat

t_s

I_C= 9 A; I_B= 1.8 A

f = 32 kHz

3.5

I_Csat= 9 A; f = 32 kHz

4.5

µs

PINNING - SOT430

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

heat collector

sink

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

200

125

150

Base current peak value

Reverse base current

average over any 20 ms period

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_mb≤ 25 ˚C

˚C

-55

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

1.0

K/W

in free air

1 Turn-off current.

April 1997

Rev 1.000

12 3 4

中文翻译

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