Datasheet > BU2727AW

BU2727AW

更新时间： 2024-09-16 22:39:43

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	73K
描述
Silicon Diffused Power Transistor

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BU2727AW 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AW

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection

circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V_CESpulses up to

1700V.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

_mb≤ 25 ˚C

125

1.0

V_CEsat

I_Csat

t_s

I_C= 5.0 A; I_B= 0.91 A

5.0

2.2

I_CM= 5.0 A; I_B(end)= 0.9 A

tbf

µs

PINNING - SOT429

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

tab collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

200

125

150

Base current peak value

Reverse base current

average over any 20 ms period

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_mb≤ 25 ˚C

˚C

-65

Junction temperature

ESD LIMITING VALUES

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_C

Electrostatic discharge capacitor voltage Human body model (250 pF,

1.5 kΩ)

1 Turn-off current.

September 1997

Rev 1.100

12 3 4 5 6 7

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