BU2720AX

更新时间： 2024-02-16 19:09:07

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率双极晶体管
页数	文件大小	规格书
7页	79K
描述
Silicon Diffused Power Transistor

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技术参数
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替代型号

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BU2720AX 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

BU2720AX 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720AX

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

without heatsink compound

with heatsink compound

in free air

3.7

2.8

K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree

2500

three terminals to external

heatsink

Capacitance from T2 to external f = 1 MHz

heatsink

STATIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_CES

Collector cut-off current ²

V_BE= 0 V; V_CE= V_CESMmax

T_j= 125 ˚C

1.0

2.0

;

I_EBO

BV_EBO

V_CEOsust

Emitter cut-off current

Emitter-base breakdown voltage

V_EB= 7.5 V; I_C= 0 A

I_B= 1 mA

1.0

7.5

825

13.5

900

Collector-emitter sustaining voltage I_B= 0 A; I_C= 100 mA;

L = 25 mH

V_CEsat

V_BEsat

h_FE

Collector-emitter saturation voltage I_C= 5.5 A; I_B= 1.38 A

1.0

Base-emitter saturation voltage

DC current gain

I_C= 5.5 A; I_B= 1.38 A

I_C= 100 mA; V_CE= 5 V

h_FE

I_C= 5.5 A; V_CE= 1 V

5.5

7.5

DYNAMIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

Switching times (16 kHz line

deflection circuit)

I_Csat= 5.5 A; L_C= 750 µH;

C_fb= 15.5 nF; V_CC= 125 V;

I_B(end)= 1.2 A; L_B= 6 µH; -V_BB= 4 V;

-I_BM= I_CM/2;

t_s

t_f

Turn-off storage time

Turn-off fall time

7.4

0.7

8.5

0.9

µs

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.200

123 4 5 6 7

中文翻译

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BU2720AX 替代型号

型号	品牌	替代类型	描述	数据表
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