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BSS87E6327

更新时间: 2024-11-18 21:04:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
9页 432K
描述
Small Signal Field-Effect Transistor, 0.29A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BSS87E6327 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.62
其他特性:LOGIC LEVEL COMPATIBLE外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:240 V
最大漏极电流 (Abs) (ID):0.26 A最大漏极电流 (ID):0.29 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):12 pFJESD-30 代码:R-PSSO-F3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSS87E6327 数据手册

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Rev. 2.0  
BSS87  
SIPMOS Small-Signal-Transistor  
Feature  
Product Summary  
V
240  
6
V
A
DS  
S N-Channel  
R
DS(on)  
S Enhancement mode, Logic Level  
S dv/dt rated  
0.26  
I
D
S Pb-free lead plating; RoHS compliant  
Qualified according to AEC Q101  
1
2
3
Halogen­free according to IEC61249­2­21  
2
VPS05558  
Type  
BSS87  
Package  
Pb-free  
Tape and Reel Information  
Marking  
P-SOT89-4-2  
Yes  
H6327: 1000 pcs/reel  
KA  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
0.26  
0.21  
1.04  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
6
kV/µs  
V
Reverse diode dv/dt  
dv/dt  
I =0.26A, V =192V, di/dt=200A/µs, T =150°C  
jmax  
S
DS  
Gate source voltage  
ESD class (JESD22-A114-HBM)  
V
20  
GS  
1A (>250V, <500V)  
1
W
Power dissipation, related to min. footprint  
P
tot  
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55... +150  
55/150/56  
j
stg  
Page 1  
2016-05-30  

BSS87E6327 替代型号

型号 品牌 替代类型 描述 数据表
BSS87L6327 INFINEON

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