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BSS87T/R

更新时间: 2024-11-18 20:03:07
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
8页 47K
描述
TRANSISTOR 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243, PLASTIC, SMD, SC-62, 3 PIN, FET General Purpose Small Signal

BSS87T/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:PLASTIC, SMD, SC-62, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.1Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.4 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-243
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSS87T/R 数据手册

 浏览型号BSS87T/R的Datasheet PDF文件第2页浏览型号BSS87T/R的Datasheet PDF文件第3页浏览型号BSS87T/R的Datasheet PDF文件第4页浏览型号BSS87T/R的Datasheet PDF文件第5页浏览型号BSS87T/R的Datasheet PDF文件第6页浏览型号BSS87T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BSS87  
N-channel enhancement mode  
vertical D-MOS transistor  
Product specification  
2001 May 18  
Supersedes data of 1997 June 23  

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