生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.24 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 1000 ns | 最大开启时间(吨): | 250 ns |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP42TRL13 | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BSP43 | STMICROELECTRONICS |
获取价格 |
MEDIUM POWER AMPLIFIER | |
BSP43 | DIOTEC |
获取价格 |
Surface mount Si-Epitaxial PlanarTransistors | |
BSP43 | YAGEO |
获取价格 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin | |
BSP43 | NEXPERIA |
获取价格 |
80 V, 1 A NPN medium power transistorProduction | |
BSP43 | ZETEX |
获取价格 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BSP43 | NXP |
获取价格 |
NPN medium power transistors | |
BSP43,115 | NXP |
获取价格 |
BSP43 - 80 V, 1 A NPN medium power transistor SC-73 4-Pin | |
BSP43-T | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BSP43T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos |