生命周期: | Transferred | 零件包装代码: | SC-73 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.14 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
基于收集器的最大容量: | 12 pF | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
最大关闭时间(toff): | 1000 ns | 最大开启时间(吨): | 250 ns |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP43T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BSP43T/R | PHILIPS |
获取价格 |
Transistor | |
BSP43TA | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BSP43-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP43-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP43TC | DIODES |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BSP43TRL | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP43TRL | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BSP43TRL13 | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP450 | INFINEON |
获取价格 |
MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature pro |