5秒后页面跳转
BSP450 PDF预览

BSP450

更新时间: 2024-09-16 22:39:39
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路光电二极管
页数 文件大小 规格书
7页 69K
描述
MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis)

BSP450 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SOT-223, 4 PIN
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.4Is Samacsys:N
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
长度:6.5 mm功能数量:1
端子数量:4最高工作温度:125 °C
最低工作温度:-40 °C输出电流流向:SOURCE
标称输出峰值电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOT-223
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.8 mm子类别:MOSFET Drivers
最大供电电压:40 V最小供电电压:12 V
标称供电电压:24 V表面贴装:YES
技术:MOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:2.3 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:150 µs
接通时间:100 µs宽度:3.5 mm
Base Number Matches:1

BSP450 数据手册

 浏览型号BSP450的Datasheet PDF文件第2页浏览型号BSP450的Datasheet PDF文件第3页浏览型号BSP450的Datasheet PDF文件第4页浏览型号BSP450的Datasheet PDF文件第5页浏览型号BSP450的Datasheet PDF文件第6页浏览型号BSP450的Datasheet PDF文件第7页 
®
Mini PROFET BSP 450  
MiniPROFET  
High-side switch  
Short-circuit protection  
Input protection  
Overtemperature protection with hysteresis  
Overload protection  
4
Overvoltage protection  
Switching inductive load  
Clamp of negative output voltage with inductive loads  
Undervoltage shutdown  
3
2
1
Maximum current internally limited  
Electrostatic discharge (ESD) protection  
1)  
Reverse battery protection  
Package: SOT 223  
Pins  
1
2
3
4
Ordering code  
Type  
OUT  
GND  
IN  
Vbb  
BSP 450  
Q67000-S266  
Maximum Ratings  
Parameter  
Symbol Values  
Unit  
Supply voltage range  
Vbb  
IL  
-0.3...48  
V
Load current  
Maximum input voltage2)  
Maximum input current  
self-limited  
I
A
V
L(SC)  
VIN  
IIN  
-5.0...Vbb  
±5  
mA  
J
Inductive load switch-off energy dissipation  
EAS  
0.5  
single pulse  
IL = 0.5A , TA = 85°C  
Operating temperature range  
Storage temperature range  
Max. power dissipation (DC)3)  
Tj  
-40 ...+125  
-55 ...+150  
°C  
Tstg  
Ptot  
VESD  
TA = 25 °C  
1.4  
W
Electrostatic discharge capability (ESD)4)  
±1  
kV  
Thermal resistance  
chip - soldering point: RthJS  
chip - ambient3) RthJA  
7
70  
K/W  
+ V  
bb  
4
1
Vo lta g e  
so urc e  
V
Ga te  
Ove rvo lta g e  
p ro te c tio n  
Curre nt  
lim it  
p ro te c tio n  
ESD-  
Diode  
Logic  
OUT  
Cha rg e p um p  
Le ve l shifte r  
Lim it fo r  
unc la m p e d  
ind . loa d s  
Vo lta g e  
se nso r  
Te m p e ra ture  
se nso r  
Re c tifie r  
R
in  
3
IN  
Load  
Lo g ic  
ESD  
MINI-PROFET  
GND  
2
Load GND  
Signal GND  
1)  
With resistor R  
=150 in GND connection, resistor in series with IN connections reverse load current  
GND  
limited by connected load.  
2)  
3)  
4)  
At V > V , the input current is not allowed to exceed ±5 mA.  
IN  
bb  
2
BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm copper area for V connection  
HBM according to MIL-STD 883D, Methode 3015.7  
bb  
Semiconductor Group  
1
06.96  

BSP450 替代型号

型号 品牌 替代类型 描述 数据表
BSP452 INFINEON

功能相似

MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature pro

与BSP450相关器件

型号 品牌 获取价格 描述 数据表
BSP452 INFINEON

获取价格

MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature pro
BSP452_07 INFINEON

获取价格

Smart High-Side Power Switch
BSP452E6327 ETC

获取价格

Analog IC
BSP452-E6327 INFINEON

获取价格

miniPROFET BSP 452
BSP452E6327T INFINEON

获取价格

Buffer/Inverter Based Peripheral Driver, 1.7A, PDSO4, PLASTIC, SOT-223, 4 PIN
BSP452HUMA1 INFINEON

获取价格

Buffer/Inverter Based Peripheral Driver, 0.7A, MOS, PDSO4, GREEN, PLASTIC, SOT-223, 4 PIN
BSP452XT INFINEON

获取价格

Buffer/Inverter Based Peripheral Driver, 0.7A, MOS, PDSO4, GREEN, PLASTIC, SOT-223, 4 PIN
BSP50 FAIRCHILD

获取价格

NPN Darlington Transistor
BSP50 NXP

获取价格

NPN Darlington transistors
BSP50 INFINEON

获取价格

NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturatio