生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 145 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.0038 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 147 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BSO040N03MSG | INFINEON | OptiMOS™3 M-Series Power-MOSFET |
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|
BSO040N03MSGXUMA1 | INFINEON | Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
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|
BSO051N03MSG | INFINEON | OptiMOS™3 M-Series Power-MOSFET |
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|
BSO052N03S | INFINEON | OptiMOS2 Power-Transistor |
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|
BSO052N03S_09 | INFINEON | OptiMOS™2 Power-Transistor |
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|
BSO064N03S | INFINEON | OptiMOS2 Power-Transistor |
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